Lifecycle Status  

ACTIVE (Last Updated: 1 week ago)

Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-3P-3, SC-65-3

Number of Pins  

3

Weight  

6.401g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

32A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

204W Tc

Turn Off Delay Time  

245 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2004

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

200V

Current Rating  

32A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

204W

Turn On Delay Time  

25 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

82m Ω @ 16A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

2220pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

110nC @ 10V

Rise Time  

270ns

Vgs (Max)  

±30V

Fall Time (Typ)  

210 ns

Continuous Drain Current (ID)  

32A

Threshold Voltage  

4V

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.082Ohm

Drain to Source Breakdown Voltage  

200V

Avalanche Energy Rating (Eas)  

955 mJ

Height  

18.9mm

Length  

15.8mm

Width  

5mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free