Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Turn Off Delay Time  

54 ns

Power Dissipation (Max)  

30W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

5.4A Tc

Series  

SuperMESH3™

Packaging  

Tube

Operating Temperature  

150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.3Ohm

Additional Feature  

ULTRA LOW-ON RESISTANCE

Base Part Number  

STF6N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

30W

Case Connection  

ISOLATED

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.3 Ω @ 2.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

880pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

35nC @ 10V

Rise Time  

15ns

Vgs (Max)  

±30V

Fall Time (Typ)  

22 ns

Continuous Drain Current (ID)  

5.4A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

650V

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free