Mounting Type  

Through Hole

Package / Case  

TO-220-3

Mount  

Through Hole

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

147W Tc

Current - Continuous Drain (Id) @ 25℃  

7.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

81 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2004

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Termination  

Through Hole

ECCN Code  

EAR99

Resistance  

1.2Ohm

Terminal Finish  

Tin (Sn)

Additional Feature  

FAST SWITCHING

Voltage - Rated DC  

600V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

7.5A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

147W

Turn On Delay Time  

16.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.2 Ω @ 3.75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1255pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

36nC @ 10V

Rise Time  

60.5ns

Vgs (Max)  

±30V

Fall Time (Typ)  

64.5 ns

Continuous Drain Current (ID)  

7.5A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Dual Supply Voltage  

600V

Nominal Vgs  

4 V

Height  

9.4mm

Length  

10.1mm

Width  

4.7mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free