Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

25W Tc

Turn Off Delay Time  

31 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Current - Continuous Drain (Id) @ 25℃  

5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

SuperMESH3™

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

ULTRA-LOW RESISTANCE

Base Part Number  

STF6N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

25W

Case Connection  

ISOLATED

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.2 Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

670pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

26nC @ 10V

Rise Time  

11ns

Vgs (Max)  

±30V

Fall Time (Typ)  

18 ns

Continuous Drain Current (ID)  

5A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

5A

Drain to Source Breakdown Voltage  

525V

Pulsed Drain Current-Max (IDM)  

20A

Avalanche Energy Rating (Eas)  

110 mJ

Length  

10.4mm

Height  

16.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant