Factory Lead Time  

17 Weeks

Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Weight  

329.988449mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

2A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

20.5 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Power Dissipation (Max)  

45W Tc

Number of Elements  

1

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH5™

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STP2N

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

8.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5 Ω @ 1A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

105pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

10nC @ 10V

Rise Time  

13.5ns

Drain to Source Voltage (Vdss)  

950V

Fall Time (Typ)  

32.5 ns

Continuous Drain Current (ID)  

2A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

2A

Drain-source On Resistance-Max  

5Ohm

Pulsed Drain Current-Max (IDM)  

8A

DS Breakdown Voltage-Min  

950V

Avalanche Energy Rating (Eas)  

50 mJ

Height  

15.75mm

Width  

4.6mm

Length  

10.4mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free