Factory Lead Time  

4 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

125W Tc

Turn Off Delay Time  

119 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperFET™

Published  

2004

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE, NOT REC (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

380MOhm

Voltage - Rated DC  

600V

Current Rating  

11A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

125W

Turn On Delay Time  

34 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

380m Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1490pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

52nC @ 10V

Rise Time  

98ns

Vgs (Max)  

±30V

Fall Time (Typ)  

56 ns

Continuous Drain Current (ID)  

11A

Threshold Voltage  

5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Height  

9.4mm

Length  

10.1mm

Width  

4.7mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free