Factory Lead Time  

5 Weeks

Package / Case  

TO-226-3, TO-92-3 (TO-226AA)

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

453.59237mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

86mA Tj

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Turn Off Delay Time  

20 ns

Power Dissipation (Max)  

740mW Ta

Number of Elements  

1

Published  

2013

Packaging  

Bulk

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOW THRESHOLD

Terminal Position  

BOTTOM

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

740mW

Turn On Delay Time  

10 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

25 Ω @ 100mA, 10V

Vgs(th) (Max) @ Id  

2.4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds  

125pF @ 25V

Rise Time  

10ns

Drain to Source Voltage (Vdss)  

400V

Vgs (Max)  

±20V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

86mA

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

0.086A

Drain to Source Breakdown Voltage  

-400V

Feedback Cap-Max (Crss)  

25 pF

Height  

5.33mm

Length  

5.21mm

Width  

4.19mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No