Factory Lead Time  

9 Weeks

Lifecycle Status  

ACTIVE (Last Updated: 2 days ago)

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

6.26A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

81 ns

Power Dissipation (Max)  

48W Tc

Number of Elements  

1

Published  

2013

Series  

FRFET®

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

HTS Code  

8541.29.00.95

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

48W

Case Connection  

ISOLATED

Turn On Delay Time  

16.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.5 Ω @ 3.13A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1255pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

36nC @ 10V

Rise Time  

60.5ns

Vgs (Max)  

±30V

Fall Time (Typ)  

64.5 ns

Continuous Drain Current (ID)  

6.26A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

25A

Avalanche Energy Rating (Eas)  

160 mJ

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No