Factory Lead Time  

9 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Current - Continuous Drain (Id) @ 25℃  

48A Tc

Number of Elements  

1

Power Dissipation (Max)  

100W Tc

Turn Off Delay Time  

49 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2V @ 250μA

Published  

1998

Operating Temperature  

-65°C~175°C TJ

Packaging  

Tube

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

25mOhm

Terminal Finish  

Tin (Sn)

Additional Feature  

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC  

60V

Current Rating  

48A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

100W

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

20m Ω @ 24A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

60nC @ 5V

Rise Time  

320ns

Vgs (Max)  

±16V

Fall Time (Typ)  

161 ns

Continuous Drain Current (ID)  

48A

Threshold Voltage  

2V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

60V

Avalanche Energy Rating (Eas)  

200 mJ

Width  

6.35mm

Height  

6.35mm

Length  

6.35mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free