Factory Lead Time  

5 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Weight  

1.8g

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

75W Tc

Turn Off Delay Time  

35 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

11.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

-100V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

-11.5A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

75W

Turn On Delay Time  

15 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

290m Ω @ 5.75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

800pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

27nC @ 10V

Rise Time  

160ns

Drain to Source Voltage (Vdss)  

100V

Vgs (Max)  

±30V

Fall Time (Typ)  

60 ns

Continuous Drain Current (ID)  

11.5A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.29Ohm

Drain to Source Breakdown Voltage  

-100V

Pulsed Drain Current-Max (IDM)  

46A

Avalanche Energy Rating (Eas)  

370 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free