Factory Lead Time  

5 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

6.000006g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

500mA Tj

Drive Voltage (Max Rds On, Min Rds On)  

0V

Number of Elements  

1

Power Dissipation (Max)  

15W Tc

Turn Off Delay Time  

15 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Published  

2008

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Additional Feature  

LOW THRESHOLD

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Number of Channels  

1

Element Configuration  

Single

Power Dissipation  

15W

Case Connection  

DRAIN

Turn On Delay Time  

10 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

25 Ω @ 120mA, 0V

Input Capacitance (Ciss) (Max) @ Vds  

300pF @ 25V

Rise Time  

15ns

Vgs (Max)  

±20V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

500mA

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

0.5A

Drain to Source Breakdown Voltage  

350V

Pulsed Drain Current-Max (IDM)  

0.5A

FET Feature  

Depletion Mode

Height  

9.02mm

Length  

10.67mm

Width  

4.83mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free