Factory Lead Time  

18 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-261-4, TO-261AA

Weight  

188mg

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

2.5W Tc

Turn Off Delay Time  

12 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Current - Continuous Drain (Id) @ 25℃  

670mA Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Series  

QFET®

Published  

2001

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

ECCN Code  

EAR99

Resistance  

2.7Ohm

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

-200V

Terminal Position  

DUAL

Terminal Form  

GULL WING

Current Rating  

-670mA

JESD-30 Code  

R-PDSO-G4

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.5W

Case Connection  

DRAIN

Turn On Delay Time  

8.5 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.7 Ω @ 335mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

250pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

8nC @ 10V

Rise Time  

35ns

Drain to Source Voltage (Vdss)  

200V

Vgs (Max)  

±30V

Fall Time (Typ)  

25 ns

Continuous Drain Current (ID)  

670mA

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

0.67A

Drain to Source Breakdown Voltage  

-200V

Pulsed Drain Current-Max (IDM)  

2.7A

Height  

1.6mm

Length  

6.5mm

Width  

3.56mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free