Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

4.535924g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

3A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

80W Tc

Turn Off Delay Time  

35 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

3.5Ohm

Terminal Finish  

Matte Tin (Sn) - annealed

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

800V

Current Rating  

3A

Base Part Number  

STP4N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

80W

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

3.5 Ω @ 1.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

575pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

22.5nC @ 10V

Rise Time  

12ns

Vgs (Max)  

±30V

Fall Time (Typ)  

32 ns

Continuous Drain Current (ID)  

3A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

3A

Drain to Source Breakdown Voltage  

800V

Height  

9.15mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free