Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Power Dissipation (Max)  

110W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

70A Tc

Series  

STripFET™ III

Packaging  

Cut Tape (CT)

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Resistance  

10.5MOhm

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Base Part Number  

STD70N

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

10.5m Ω @ 35A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2200pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

35nC @ 10V

Vgs (Max)  

±20V

Continuous Drain Current (ID)  

70A

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

60V

Pulsed Drain Current-Max (IDM)  

280A

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

Lead Free  

Lead Free