Factory Lead Time  

10 Weeks

Package / Case  

TO-220-3 Full Pack

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

50W Tc

Turn Off Delay Time  

120 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Current - Continuous Drain (Id) @ 25℃  

15A Ta

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Operating Temperature  

150°C TJ

Packaging  

Bulk

Published  

2011

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Position  

SINGLE

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

Turn On Delay Time  

38 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

350m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1660pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

42nC @ 10V

Rise Time  

45ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±30V

Fall Time (Typ)  

35 ns

Continuous Drain Current (ID)  

15A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Pulsed Drain Current-Max (IDM)  

60A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

15 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free