Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

8-PowerTDFN

Contact Plating  

Tin

Number of Pins  

8

Transistor Element Material  

SILICON

Turn Off Delay Time  

6.3 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.3V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

2.6W Ta

Current - Continuous Drain (Id) @ 25℃  

15A Ta 60A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Series  

NexFET™

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

5

Termination  

SMD/SMT

ECCN Code  

EAR99

Additional Feature  

AVALANCHE RATED

Terminal Position  

DUAL

Peak Reflow Temperature (Cel)  

260

Base Part Number  

CSD16409

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.6W

Case Connection  

DRAIN

Turn On Delay Time  

6.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8.2m Ω @ 17A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

800pF @ 12.5V

Gate Charge (Qg) (Max) @ Vgs  

5.6nC @ 4.5V

Rise Time  

10.6ns

Vgs (Max)  

+16V, -12V

Fall Time (Typ)  

3.4 ns

Continuous Drain Current (ID)  

60A

Threshold Voltage  

2V

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

25V

Pulsed Drain Current-Max (IDM)  

90A

Dual Supply Voltage  

25V

Avalanche Energy Rating (Eas)  

72 mJ

Nominal Vgs  

2 V

Feedback Cap-Max (Crss)  

55 pF

Width  

3.3mm

Height  

1.1mm

Length  

3.3mm

Thickness  

1mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Contains Lead