Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3 Full Pack

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

7.2A Tc

Power Dissipation (Max)  

35W Tc

Turn Off Delay Time  

36 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Base Part Number  

STF7N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

ISOLATED

Turn On Delay Time  

14 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.35 Ω @ 3.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1031pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

33nC @ 10V

Rise Time  

9ns

Vgs (Max)  

±30V

Fall Time (Typ)  

23 ns

Continuous Drain Current (ID)  

7.2A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

950V

Pulsed Drain Current-Max (IDM)  

28.8A

Avalanche Energy Rating (Eas)  

220 mJ

Height  

16.4mm

Length  

10.4mm

Width  

4.6mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant