Factory Lead Time  

16 Weeks

Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

16A Tc

Power Dissipation (Max)  

150W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ M2

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STP24N

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

230m Ω @ 8A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1060pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

29nC @ 10V

Drain to Source Voltage (Vdss)  

650V

Vgs (Max)  

±25V

Continuous Drain Current (ID)  

16A

JEDEC-95 Code  

TO-220AB

Drain-source On Resistance-Max  

0.23Ohm

Pulsed Drain Current-Max (IDM)  

64A

DS Breakdown Voltage-Min  

650V

Avalanche Energy Rating (Eas)  

650 mJ

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free