Factory Lead Time  

12 Weeks

Package / Case  

TO-220-3

Mount  

Through Hole

Mounting Type  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Power Dissipation (Max)  

190W Tc

Turn Off Delay Time  

50 ns

Current - Continuous Drain (Id) @ 25℃  

10A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

850mOhm

Additional Feature  

ULTRA-LOW RESISTANCE

Base Part Number  

STP13N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

190W

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

850m Ω @ 5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1620pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

51nC @ 10V

Rise Time  

16ns

Vgs (Max)  

±30V

Fall Time (Typ)  

21 ns

Continuous Drain Current (ID)  

10A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

950V

Pulsed Drain Current-Max (IDM)  

40A

Avalanche Energy Rating (Eas)  

400 mJ

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free