Lifecycle Status  

ACTIVE (Last Updated: 3 hours ago)

Factory Lead Time  

6 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

8A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

178W Tc

Turn Off Delay Time  

65 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Voltage - Rated DC  

800V

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

8A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

178W

Turn On Delay Time  

40 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.55 Ω @ 4A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

2050pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

45nC @ 10V

Rise Time  

110ns

Vgs (Max)  

±30V

Fall Time (Typ)  

70 ns

Continuous Drain Current (ID)  

8A

Threshold Voltage  

5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

8A

Drain to Source Breakdown Voltage  

800V

Avalanche Energy Rating (Eas)  

850 mJ

Height  

9.4mm

Length  

10.1mm

Width  

4.7mm

REACH SVHC  

No SVHC

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free