Factory Lead Time  

17 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

18A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

130W Tc

Turn Off Delay Time  

43 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ V

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

168MOhm

Base Part Number  

STP20N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

130W

Case Connection  

DRAIN

Turn On Delay Time  

43 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

190m Ω @ 9A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1345pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

45nC @ 10V

Rise Time  

7.5ns

Vgs (Max)  

±25V

Fall Time (Typ)  

7.5 ns

Continuous Drain Current (ID)  

18A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

72A

Avalanche Energy Rating (Eas)  

270 mJ

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free