Factory Lead Time  

18 Weeks

Surface Mount  

NO

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

15A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 1mA

Power Dissipation (Max)  

60W Tc

Number of Elements  

1

Published  

2017

Packaging  

Bulk

Operating Temperature  

-55°C~150°C TJ

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

290m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1050pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

27.5nC @ 10V

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±20V

JEDEC-95 Code  

TO-220AB

Drain Current-Max (Abs) (ID)  

15A

Drain-source On Resistance-Max  

0.29Ohm

Pulsed Drain Current-Max (IDM)  

45A

DS Breakdown Voltage-Min  

600V

Avalanche Energy Rating (Eas)  

284 mJ

RoHS Status  

ROHS3 Compliant

REACH SVHC  

not_compliant