Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

13A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

110W Tc

Turn Off Delay Time  

13 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

FDmesh™ II

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

290mOhm

Base Part Number  

STP18N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

130W

Case Connection  

DRAIN

Turn On Delay Time  

55 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

290m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1030pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

34nC @ 10V

Rise Time  

15.5ns

Drain to Source Voltage (Vdss)  

600V

Vgs (Max)  

±25V

Fall Time (Typ)  

18 ns

Continuous Drain Current (ID)  

13A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

52A

Avalanche Energy Rating (Eas)  

187 mJ

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free