Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

11A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Turn Off Delay Time  

40 ns

Power Dissipation (Max)  

25W Tc

Operating Temperature  

150°C TJ

Series  

FDmesh™ II

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Base Part Number  

STF12

Configuration  

SINGLE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

25W

Case Connection  

ISOLATED

Turn On Delay Time  

12 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

380m Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

850pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

30nC @ 10V

Rise Time  

15ns

Drain to Source Voltage (Vdss)  

500V

Vgs (Max)  

±25V

Fall Time (Typ)  

17 ns

Continuous Drain Current (ID)  

11A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Pulsed Drain Current-Max (IDM)  

44A

DS Breakdown Voltage-Min  

500V

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No