Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Contact Plating  

Tin

Number of Pins  

3

Weight  

9.071847g

Transistor Element Material  

SILICON

Number of Elements  

1

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Turn Off Delay Time  

61 ns

Power Dissipation (Max)  

150W Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

13A Tc

Operating Temperature  

-55°C~150°C TJ

Series  

SuperMESH™

Packaging  

Tube

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

550mOhm

Voltage - Rated DC  

600V

Current Rating  

13A

Base Part Number  

STW13N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

150W

Turn On Delay Time  

22 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

550m Ω @ 4.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2030pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

92nC @ 10V

Rise Time  

14ns

Vgs (Max)  

±30V

Fall Time (Typ)  

12 ns

Continuous Drain Current (ID)  

13A

Threshold Voltage  

3.75V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

52A

Avalanche Energy Rating (Eas)  

400 mJ

Width  

5.15mm

Length  

15.75mm

Height  

20.15mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free