Factory Lead Time  

16 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

12A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

30W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

MDmesh™ II

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

STFU1

JESD-30 Code  

R-PSFM-T3

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Case Connection  

ISOLATED

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

380m Ω @ 6A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

983pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

33.3nC @ 10V

Drain to Source Voltage (Vdss)  

650V

Vgs (Max)  

±25V

Continuous Drain Current (ID)  

12A

JEDEC-95 Code  

TO-220AB

Drain-source On Resistance-Max  

0.38Ohm

Pulsed Drain Current-Max (IDM)  

48A

DS Breakdown Voltage-Min  

650V

Avalanche Energy Rating (Eas)  

187 mJ

REACH SVHC  

not_compliant

RoHS Status  

Non-RoHS Compliant