Factory Lead Time  

13 Weeks

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Contact Plating  

Tin

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Turn Off Delay Time  

230 ns

Power Dissipation (Max)  

39W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

20A Tc

Series  

SuperFET™

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Not For New Designs

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

190MOhm

Voltage - Rated DC  

600V

Current Rating  

20A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

39W

Case Connection  

ISOLATED

Turn On Delay Time  

62 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

190m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

3080pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

98nC @ 10V

Rise Time  

140ns

Vgs (Max)  

±30V

Fall Time (Typ)  

65 ns

Continuous Drain Current (ID)  

20A

Threshold Voltage  

5V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

60A

Avalanche Energy Rating (Eas)  

690 mJ

Width  

4.7mm

Length  

10.16mm

Height  

9.19mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free