Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3 Full Pack

Contact Plating  

Tin

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

35W Tc

Current - Continuous Drain (Id) @ 25℃  

15A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

55 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 100μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STP17N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

ISOLATED

Turn On Delay Time  

25 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

250m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

65nC @ 10V

Rise Time  

23ns

Vgs (Max)  

±30V

Fall Time (Typ)  

13 ns

Continuous Drain Current (ID)  

15A

Threshold Voltage  

3.75V

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.25Ohm

Drain to Source Breakdown Voltage  

400V

Pulsed Drain Current-Max (IDM)  

60A

Avalanche Energy Rating (Eas)  

450 mJ

Height  

16.4mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant