Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

90W Tc

Turn Off Delay Time  

36 ns

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

1.6Ohm

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

600V

Current Rating  

5A

Base Part Number  

STP5N

Pin Count  

3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.6 Ω @ 2.5A, 10V

Vgs(th) (Max) @ Id  

4.5V @ 50μA

Input Capacitance (Ciss) (Max) @ Vds  

690pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

34nC @ 10V

Rise Time  

25ns

Vgs (Max)  

±30V

Fall Time (Typ)  

25 ns

Continuous Drain Current (ID)  

5A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain Current-Max (Abs) (ID)  

5A

Drain to Source Breakdown Voltage  

600V

Pulsed Drain Current-Max (IDM)  

20A

Avalanche Energy Rating (Eas)  

220 mJ

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free