Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

80A Tc

Drive Voltage (Max Rds On, Min Rds On)  

5V 10V

Number of Elements  

1

Power Dissipation (Max)  

300W Tc

Turn Off Delay Time  

85 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

2.5V @ 250μA

Operating Temperature  

175°C TJ

Packaging  

Tube

Series  

STripFET™ II

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

LOGIC LEVEL COMPATIBLE

Base Part Number  

STB80N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

300W

Turn On Delay Time  

35 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

8m Ω @ 40A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4350pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

100nC @ 4.5V

Rise Time  

145ns

Vgs (Max)  

±16V

Fall Time (Typ)  

65 ns

Continuous Drain Current (ID)  

80A

Gate to Source Voltage (Vgs)  

16V

Drain to Source Breakdown Voltage  

55V

Avalanche Energy Rating (Eas)  

870 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant