Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Full Pack, I2Pak

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

10A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

35W Tc

Turn Off Delay Time  

55 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Base Part Number  

STFI10N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

35W

Case Connection  

ISOLATED

Turn On Delay Time  

20 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

750m Ω @ 4.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

1370pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

70nC @ 10V

Rise Time  

20ns

Vgs (Max)  

±30V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

10A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

0.75Ohm

Drain to Source Breakdown Voltage  

600V

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant