Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

25 ns

Power Dissipation (Max)  

45W Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

5A Tc

Series  

MDmesh™ II

Packaging  

Tube

Operating Temperature  

150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Terminal Position  

SINGLE

Peak Reflow Temperature (Cel)  

260

Base Part Number  

STU8N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

7 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

790m Ω @ 2.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

364pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

14nC @ 10V

Rise Time  

4.4ns

Drain to Source Voltage (Vdss)  

500V

Vgs (Max)  

±25V

Fall Time (Typ)  

8.8 ns

Continuous Drain Current (ID)  

5A

Threshold Voltage  

3V

Gate to Source Voltage (Vgs)  

25V

Drain Current-Max (Abs) (ID)  

5A

Drain-source On Resistance-Max  

0.79Ohm

Pulsed Drain Current-Max (IDM)  

20A

DS Breakdown Voltage-Min  

500V

Avalanche Energy Rating (Eas)  

140 mJ

Height  

6.9mm

Length  

6.6mm

Width  

2.4mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free