Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Contact Plating  

Tin

Number of Pins  

3

Transistor Element Material  

SILICON

Number of Elements  

1

Power Dissipation (Max)  

45W Tc

Current - Continuous Drain (Id) @ 25℃  

2.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

21 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

2.6Ohm

Additional Feature  

ULTRA-LOW RESISTANCE

Terminal Position  

SINGLE

Base Part Number  

STP4N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

20W

Case Connection  

ISOLATED

Turn On Delay Time  

8 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2.6 Ω @ 1.25A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

334pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

11nC @ 10V

Rise Time  

7ns

Vgs (Max)  

±30V

Fall Time (Typ)  

14 ns

Continuous Drain Current (ID)  

2.5A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

525V

Height  

16.4mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free