Factory Lead Time  

12 Weeks

Mounting Type  

Through Hole

Package / Case  

TO-262-3 Long Leads, I2Pak, TO-262AA

Mount  

Through Hole

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

5.5A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

90W Tc

Turn Off Delay Time  

49 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH3™

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Additional Feature  

ULTRA LOW-ON RESISTANCE

Terminal Position  

SINGLE

Base Part Number  

STI6N

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Turn On Delay Time  

22 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

1.2 Ω @ 2.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

875pF @ 50V

Gate Charge (Qg) (Max) @ Vgs  

34nC @ 10V

Rise Time  

12ns

Drain to Source Voltage (Vdss)  

620V

Vgs (Max)  

±30V

Fall Time (Typ)  

20 ns

Continuous Drain Current (ID)  

5.5A

Threshold Voltage  

3.75V

Gate to Source Voltage (Vgs)  

30V

Pulsed Drain Current-Max (IDM)  

22A

DS Breakdown Voltage-Min  

620V

Avalanche Energy Rating (Eas)  

140 mJ

Nominal Vgs  

3.75 V

Height  

10.75mm

Width  

4.6mm

Length  

10.4mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free