Factory Lead Time  

4 Weeks

Package / Case  

TO-220-3 Full Pack

Mounting Type  

Through Hole

Mount  

Through Hole

Number of Pins  

3

Weight  

2.27g

Transistor Element Material  

SILICON

Power Dissipation (Max)  

38W Tc

Turn Off Delay Time  

47 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Current - Continuous Drain (Id) @ 25℃  

6.3A Tc

Series  

QFET®

Published  

2000

Packaging  

Tube

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

200V

Current Rating  

6.3A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

38W

Case Connection  

ISOLATED

Turn On Delay Time  

8 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

400m Ω @ 3.15A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

550pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

25nC @ 10V

Rise Time  

75ns

Vgs (Max)  

±25V

Fall Time (Typ)  

64 ns

Continuous Drain Current (ID)  

6.3A

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.4Ohm

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

25.2A

Width  

4.7mm

Length  

10.16mm

Height  

9.19mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free