Factory Lead Time  

7 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-251-3 Short Leads, IPak, TO-251AA

Number of Pins  

3

Weight  

343.08mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

1.6A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

2.5W Ta 50W Tc

Turn Off Delay Time  

25 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

ACTIVE (Last Updated: 5 days ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Voltage - Rated DC  

1kV

Current Rating  

1.6A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.5W

Turn On Delay Time  

13 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

9 Ω @ 800mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

520pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

15.5nC @ 10V

Rise Time  

30ns

Drain to Source Voltage (Vdss)  

1000V

Vgs (Max)  

±30V

Fall Time (Typ)  

35 ns

Continuous Drain Current (ID)  

1.6A

Gate to Source Voltage (Vgs)  

30V

Drain-source On Resistance-Max  

9Ohm

Drain to Source Breakdown Voltage  

1kV

Pulsed Drain Current-Max (IDM)  

6.4A

Height  

7.57mm

Length  

6.8mm

Width  

2.5mm

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free