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NTE4151PT1G - ON Semiconductor

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Kynix Teil #: KY13-NTE4151PT1G

Hersteller Teil #: NTE4151PT1G

Produktkategorie: Transistors - FETs, MOSFETs - Single

Hersteller: ON Semiconductor

Beschreibung: MOSFET P-CH 20V 0.76A SC-89

Verpackung: SC-89, SOT-490

Menge:

Bleifrei-Status / RoHS-Status: Bleifrei / RoHS-konform

Vorlaufzeit: 3(168 Hours)

Datenblatt: datasheet

NTE4151PT1G Datenblatt

Attribute

Attribute Value

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time

8 Weeks

Mounting Type

Surface Mount

Package / Case

SC-89, SOT-490

Surface Mount

YES

Number of Pins

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

760mA Tj

Drive Voltage (Max Rds On, Min Rds On)

1.8V 4.5V

Number of Elements

Power Dissipation (Max)

313mW Tj

Turn Off Delay Time

29 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2005

JESD-609 Code

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

260mOhm

Terminal Finish

Tin (Sn)

Voltage - Rated DC

-20V

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

-760mA

Time@Peak Reflow Temperature-Max (s)

Pin Count

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

313mW

Turn On Delay Time

8 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

360m Ω @ 350mA, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

156pF @ 5V

Gate Charge (Qg) (Max) @ Vgs

2.1nC @ 4.5V

Rise Time

8.2ns

Drain to Source Voltage (Vdss)

20V

Vgs (Max)

±6V

Fall Time (Typ)

8.2 ns

Continuous Drain Current (ID)

760mA

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

0.76A

Drain to Source Breakdown Voltage

-20V

Height

800μm

Length

1.6764mm

Width

950μm

Radiation Hardening

RoHS Status

ROHS3 Compliant

Lead Free

Teilenummer	Paket	Beschreibung
NTE4151PT1G	SC-89, SOT-490	MOSFET P-CH 20V 0.76A SC-89
NTA4151PT1G	SC-75, SOT-416	MOSFET P-CH 20V 0.76A SOT-416
NTA4151PT1	SC-75, SOT-416	MOSFET P-CH 20V 0.76A SOT-416
NTA4153NT1	SC-75, SOT-416	MOSFET N-CH 20V 915MA SOT-416
PMR290XN,115	SC-75, SOT-416	MOSFET N-CH 20V 0.97A SOT416

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What is MOSFET and how it works?

MOSFET is an electrically driven switch, which allows and prevents a flow of current, without any mechanical moving parts. The MOSFET stands for METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR(Fig 1). In MOSFET, the MOS part is related to the structure of the transistor, while the FET part is related to how it works.

What type of device is MOSFET?

MOSFET stands for metal-oxide-semiconductor field-effect transistor. It is a field-effect transistor with a MOS structure. Typically, the MOSFET is a three-terminal device with gate (G), drain (D) and source (S) terminals.

What is the basic principle of MOSFET?

When voltage is applied to the gate, an electrical field is generated that changes the width of the channel region, where the electrons flow. The wider the channel region, the better conductivity of a device will be.