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FDT86106LZ Datenblatt

| Telefon | Teilenummer | Paket | Beschreibung |
|---|---|---|---|
| FDT86106LZ | TO-261-4, TO-261AA | Trans MOSFET N-CH 100V 3.2A 4-Pin(3 Tab) SOT-223 T/R | |
| ZXMN7A11GTA | TO-261-4, TO-261AA | Trans MOSFET N-CH 70V 3.8A 4-Pin(3 Tab) SOT-223 T/R | |
| ZXMN10A25GTA | TO-261-4, TO-261AA | ZXMN10A25G Series N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount-SOT-223-3 | |
| FDT86113LZ | TO-261-4, TO-261AA | MOSFET 100V N-Channel PowerTrench MOSFET | |
| FDT3612 | TO-261-4, TO-261AA | ON SEMICONDUCTOR - FDT3612 - MOSFET Transistor, N Channel, 3.7 A, 100 V, 0.12 ohm, 10 V, 2.5 V |
There are two types of MOSFET and they are named: N-type or P-type. BJT is of two types and they are named as: PNP and NPN. MOSFET is a voltage-controlled device. BJT is a current-controlled device. The input resistance of MOSFET is high.
The MOSFET is the most common type of transistor today. Their primary use is to control conductivity, or how much electricity can flow, between its source and drain terminals based on the amount of voltage applied to its gate terminal.
The main advantage of MOSFET is that there is no gate current i.e. it does not have any input current. It has a very high input impedance due to the insulation layer. It consumes negligible energy in its operation due to a very low leakage current. It has a very high switching speed.
Datenblatt
| Menge. | Stückpreis |
|---|---|
| 1+: | $1.77743 |
| 10+: | $1.67682 |
| 100+: | $1.58190 |
| 500+: | $1.49236 |
| 1000+: | $1.40789 |
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