Factory Lead Time  

4 Weeks

Contact Plating  

Tin

Package / Case  

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Weight  

260.37mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

1.7A Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Turn Off Delay Time  

20 ns

Power Dissipation (Max)  

2.5W Ta 50W Tc

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

10V

Series  

QFET®

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Voltage - Rated DC  

900V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Current Rating  

1.7A

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

JESD-30 Code  

R-PSSO-G2

Qualification Status  

Not Qualified

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

2.5W

Case Connection  

DRAIN

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

7.2 Ω @ 850mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

15nC @ 10V

Rise Time  

35ns

Vgs (Max)  

±30V

Fall Time (Typ)  

30 ns

Continuous Drain Current (ID)  

1.7A

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

900V

Pulsed Drain Current-Max (IDM)  

6.8A

RoHS Status  

ROHS3 Compliant

REACH SVHC  

not_compliant

Lead Free  

Lead Free