Factory Lead Time  

17 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-247-3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

15A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

110W Tc

Operating Temperature  

150°C TJ

Packaging  

Tube

Series  

MDmesh™ V

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Base Part Number  

STW18N

JESD-30 Code  

R-PSFM-T3

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

110W

Case Connection  

DRAIN

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

220m Ω @ 7.5A, 10V

Vgs(th) (Max) @ Id  

5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1240pF @ 100V

Gate Charge (Qg) (Max) @ Vgs  

31nC @ 10V

Rise Time  

7ns

Vgs (Max)  

±25V

Fall Time (Typ)  

9 ns

Continuous Drain Current (ID)  

15A

Gate to Source Voltage (Vgs)  

25V

Drain-source On Resistance-Max  

0.22Ohm

Drain to Source Breakdown Voltage  

650V

Pulsed Drain Current-Max (IDM)  

60A

Avalanche Energy Rating (Eas)  

210 mJ

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free