Factory Lead Time  

12 Weeks

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

18A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

110W Tc

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

40 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

STripFET™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

125mOhm

Terminal Finish  

Tin (Sn)

Voltage - Rated DC  

200V

Current Rating  

18A

Base Part Number  

STP20N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

90W

Case Connection  

ISOLATED

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

125m Ω @ 10A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

940pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

39nC @ 10V

Rise Time  

30ns

Vgs (Max)  

±20V

Fall Time (Typ)  

10 ns

Continuous Drain Current (ID)  

18A

Threshold Voltage  

3V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

20V

Drain to Source Breakdown Voltage  

200V

Pulsed Drain Current-Max (IDM)  

72A

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Lead Free