Lifecycle Status  

ACTIVE (Last Updated: 2 days ago)

Factory Lead Time  

5 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Weight  

1.8g

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

33A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

127W Tc

Turn Off Delay Time  

80 ns

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tube

Series  

QFET®

Published  

2013

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

52mOhm

Voltage - Rated DC  

100V

Current Rating  

33A

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

127W

Turn On Delay Time  

15 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

52m Ω @ 16.5A, 10V

Vgs(th) (Max) @ Id  

4V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

1500pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

51nC @ 10V

Rise Time  

195ns

Vgs (Max)  

±25V

Fall Time (Typ)  

110 ns

Continuous Drain Current (ID)  

33A

Threshold Voltage  

4V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

25V

Drain to Source Breakdown Voltage  

100V

Dual Supply Voltage  

100V

Nominal Vgs  

4 V

Height  

9.4mm

Length  

10.67mm

Width  

4.83mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free