Factory Lead Time  

12 Weeks

Contact Plating  

Tin

Mount  

Through Hole

Mounting Type  

Through Hole

Package / Case  

TO-220-3

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

2.1A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

70W Tc

Turn Off Delay Time  

43 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4.5V @ 50μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

SuperMESH™

JESD-609 Code  

e3

Part Status  

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

ECCN Code  

EAR99

Resistance  

5Ohm

Additional Feature  

AVALANCHE RATED

Voltage - Rated DC  

900V

Current Rating  

2.1A

Base Part Number  

STP2N

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

70W

Turn On Delay Time  

21 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

6.5 Ω @ 1.05A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

485pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

27nC @ 10V

Rise Time  

11ns

Vgs (Max)  

±30V

Fall Time (Typ)  

40 ns

Continuous Drain Current (ID)  

2.1A

Threshold Voltage  

3.75V

JEDEC-95 Code  

TO-220AB

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

900V

Pulsed Drain Current-Max (IDM)  

8.4A

Height  

15.75mm

Length  

10.4mm

Width  

4.6mm

REACH SVHC  

No SVHC

Radiation Hardening  

No

RoHS Status  

ROHS3 Compliant

Lead Free  

Lead Free