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FDC2612 - ON Semiconductor

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Kynix Teil #: KY13-FDC2612

Hersteller Teil #: FDC2612

Produktkategorie: Transistors - FETs, MOSFETs - Single

Hersteller: ON Semiconductor

Beschreibung: Transistor, Mosfet, N-channel, 200V V(br)dss, 1.1A I(d), TSOP

Verpackung: SOT-23-6 Thin, TSOT-23-6

Menge:

Bleifrei-Status / RoHS-Status: Bleifrei / RoHS-konform

Vorlaufzeit: 3(168 Hours)

Datenblatt: datasheet

FDC2612 Datenblatt

Attribute

Attribute Value

Lifecycle Status

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time

15 Weeks

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

Weight

36mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

1.1A Ta

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

Power Dissipation (Max)

1.6W Ta

Turn Off Delay Time

17 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerTrench®

JESD-609 Code

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

725MOhm

Voltage - Rated DC

200V

Terminal Position

DUAL

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Current Rating

1.1A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Qualification Status

Not Qualified

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.6W

Turn On Delay Time

6 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

725m Ω @ 1.1A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds

234pF @ 100V

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Rise Time

6ns

Vgs (Max)

±20V

Fall Time (Typ)

6 ns

Continuous Drain Current (ID)

1.1A

Threshold Voltage

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

200V

Height

1mm

Length

3mm

Width

1.7mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Teilenummer	Paket	Beschreibung
FDC2612	SOT-23-6 Thin, TSOT-23-6	Transistor, Mosfet, N-channel, 200V V(br)dss, 1.1A I(d), TSOP
FDC2512	SOT-23-6 Thin, TSOT-23-6	ON SEMICONDUCTOR - FDC2512 - Power MOSFET, N Channel, 150 V, 1.4 A, 0.319 ohm, SuperSOT, Surface Mount
FDC654P	SOT-23-6 Thin, TSOT-23-6	Trans MOSFET P-CH 30V 3.6A 6-Pin SuperSOT T/R
FDC8601	SOT-23-6 Thin, TSOT-23-6	Trans MOSFET N-CH 100V 2.7A 6-Pin SuperSOT T/R
STT6N3LLH6	SOT-23-6	MOSFET N-Ch 30V .025Ohm 6A STripFET VI