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FDC658P - ON Semiconductor

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Kynix Teil #: KY13-FDC658P

Hersteller Teil #: FDC658P

Produktkategorie: Transistors - FETs, MOSFETs - Single

Hersteller: ON Semiconductor

Beschreibung: ON SEMICONDUCTOR - FDC658P - MOSFET Transistor, P Channel, 4 A, 30 V, 0.041 ohm, 10 V, 1.7 V

Verpackung: SOT-23-6 Thin, TSOT-23-6

Menge:

Bleifrei-Status / RoHS-Status: Bleifrei / RoHS-konform

Vorlaufzeit: 3(168 Hours)

Datenblatt: datasheet

FDC658P Datenblatt

Attribute

Attribute Value

Factory Lead Time

10 Weeks

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Number of Pins

Weight

36mg

Transistor Element Material

SILICON

Current - Continuous Drain (Id) @ 25℃

4A Ta

Drive Voltage (Max Rds On, Min Rds On)

10V

Number of Elements

Power Dissipation (Max)

1.6W Ta

Turn Off Delay Time

24 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3V @ 250μA

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerTrench®

Published

2017

JESD-609 Code

Pbfree Code

yes

Part Status

ACTIVE (Last Updated: 2 days ago)

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

50mOhm

Additional Feature

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC

-30V

Terminal Position

DUAL

Terminal Form

GULL WING

Current Rating

-4A

Number of Channels

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

1.6W

Turn On Delay Time

12 ns

FET Type

P-Channel

Transistor Application

SWITCHING

Rds On (Max) @ Id, Vgs

50m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds

750pF @ 15V

Gate Charge (Qg) (Max) @ Vgs

12nC @ 5V

Rise Time

14ns

Drain to Source Voltage (Vdss)

30V

Vgs (Max)

±20V

Fall Time (Typ)

16 ns

Continuous Drain Current (ID)

-4A

Threshold Voltage

-1.7V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

-30V

Max Junction Temperature (Tj)

150°C

Height

1.1mm

Length

3mm

Width

1.7mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

ROHS3 Compliant

Lead Free

Teilenummer	Paket	Beschreibung
FDC658P	SOT-23-6 Thin, TSOT-23-6	ON SEMICONDUCTOR - FDC658P - MOSFET Transistor, P Channel, 4 A, 30 V, 0.041 ohm, 10 V, 1.7 V
FDC610PZ	SOT-23-6 Thin, TSOT-23-6	Trans MOSFET P-CH 30V 4.9A 6-Pin SuperSOT T/R
FDC653N	SOT-23-6 Thin, TSOT-23-6	ON SEMICONDUCTOR - FDC653N - Power MOSFET, N Channel, 30 V, 5 A, 0.035 ohm, SuperSOT, Surface Mount
ZXMN3A03E6TA	SOT-23-6	MOSFET N-CH 30V 3.7A SOT-23-6
DMP3065LVT-7	SOT-23-6 Thin, TSOT-23-6	MOSFET 30V P-Ch Enh Mode 20Vgss 587pF 12.3nC