Mounting Type  

Surface Mount

Package / Case  

8-SOIC (0.154, 3.90mm Width)

Surface Mount  

YES

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

3.5A 2.3A

Number of Elements  

2

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tube

Series  

HEXFET®

Published  

2001

JESD-609 Code  

e0

Part Status  

Obsolete

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

8

ECCN Code  

EAR99

Terminal Finish  

Tin/Lead (Sn/Pb)

Additional Feature  

HIGH RELIABILITY

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

245

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PDSO-G8

Qualification Status  

Not Qualified

Configuration  

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

Power - Max  

2W

FET Type  

N and P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

100m Ω @ 2.2A, 10V

Vgs(th) (Max) @ Id  

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds  

190pF @ 15V

Gate Charge (Qg) (Max) @ Vgs  

14nC @ 10V

Drain to Source Voltage (Vdss)  

30V

Polarity/Channel Type  

N-CHANNEL AND P-CHANNEL

JEDEC-95 Code  

MS-012AA

Drain Current-Max (Abs) (ID)  

3.5A

Drain-source On Resistance-Max  

0.1Ohm

Pulsed Drain Current-Max (IDM)  

16A

DS Breakdown Voltage-Min  

30V

Avalanche Energy Rating (Eas)  

44 mJ

FET Technology  

METAL-OXIDE SEMICONDUCTOR

FET Feature  

Logic Level Gate

RoHS Status  

Non-RoHS Compliant