Factory Lead Time  

11 Weeks

Mounting Type  

Through Hole

Package / Case  

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Surface Mount  

NO

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

500mA Ta

Drive Voltage (Max Rds On, Min Rds On)  

10V

Number of Elements  

1

Power Dissipation (Max)  

830mW Ta

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3V @ 1mA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Box (TB)

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

3

Terminal Position  

BOTTOM

Peak Reflow Temperature (Cel)  

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)  

NOT SPECIFIED

Base Part Number  

BS170

JESD-30 Code  

O-PBCY-T3

Qualification Status  

Not Qualified

Configuration  

SINGLE WITH BUILT-IN DIODE

Operating Mode  

ENHANCEMENT MODE

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

5 Ω @ 200mA, 10V

Input Capacitance (Ciss) (Max) @ Vds  

40pF @ 10V

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

±20V

Drain Current-Max (Abs) (ID)  

0.5A

Drain-source On Resistance-Max  

5Ohm

DS Breakdown Voltage-Min  

60V

Feedback Cap-Max (Crss)  

10 pF

RoHS Status  

ROHS3 Compliant