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FDN304P Datenblatt

| Telefon | Teilenummer | Paket | Beschreibung |
|---|---|---|---|
| FDN304P | TO-236-3, SC-59, SOT-23-3 | ON SEMICONDUCTOR - FDN304P - Power MOSFET, P Channel, 20 V, 2.4 A, 0.052 ohm, SuperSOT, Surface Mount | |
| FDN340P | TO-236-3, SC-59, SOT-23-3 | ON SEMICONDUCTOR - FDN340P - Power MOSFET, P Channel, 20 V, 2 A, 0.06 ohm, SuperSOT, Surface Mount | |
| BSS806NEH6327XTSA1 | TO-236-3, SC-59, SOT-23-3 | MOSFET N-Ch 20V 2.3A SOT-23-3 | |
| FDN335N | TO-236-3, SC-59, SOT-23-3 | ON SEMICONDUCTOR - FDN335N - Power MOSFET, N Channel, 20 V, 1.7 A, 0.055 ohm, SOT-23, Surface Mount |
The MOSFET is the most common type of transistor .The amount of voltage applied to the gate terminal is used to control conductivity, or how much electricity can flow between the source and drain terminals.
The ability to control the voltage and current flow between the source and drain terminals is the main principle of the MOSFET device. The device's functionality is based on the MOS capacitor, which works almost like a switch. The main component of a MOSFET is the MOS capacitor.
We can drive the MOSFET to turn "ON" faster or slower, or to pass high or low currents when using it as a switch. Because the power MOSFET can be turned "on" and "off," it can be used as a very efficient switch with switching speeds that are much faster than standard bipolar junction transistors.
Datenblatt
| Menge. | Stückpreis |
|---|---|
| 1+: | $0.74286 |
| 10+: | $0.70081 |
| 100+: | $0.66114 |
| 500+: | $0.62372 |
| 1000+: | $0.58841 |
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