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FDS4465 Datenblatt

| Telefon | Teilenummer | Paket | Beschreibung |
|---|---|---|---|
| FDS4465 | 8-SOIC (0.154, 3.90mm Width) | In a Pack of 5, FDS4465 P-Channel MOSFET, 13.5 A, 20 V, 8-Pin SOIC ON Semiconductor | |
| FDS6574A | 8-SOIC (0.154, 3.90mm Width) | Trans MOSFET N-CH 20V 16A 8-Pin SOIC N T/R | |
| IRF7425TRPBF | 8-SOIC (0.154, 3.90mm Width) | MOSFET P-CH 20V 15A 8-SOIC |
When voltage is applied to the gate, an electrical field is generated that changes the width of the channel region, where the electrons flow. The wider the channel region, the better conductivity of a device will be.
There are many differences between the MOSFET and BJT. The MOSFET (voltage controlled) is a metal-oxide semiconductor whereas the BJT (current controlled) is a bipolar junction transistor.
IGBT is a three terminal semiconductor switching device used in the electronic circuits for switching and amplification of signals. MOSFET is a four terminal semiconductor switching device which is also used as switching and amplification. IGBT has three terminals, which are: emitter (E), gate (G) and collector (C).2022
Datenblatt
| Menge. | Stückpreis |
|---|---|
| 1+: | $1.58486 |
| 10+: | $1.49515 |
| 100+: | $1.41052 |
| 500+: | $1.33068 |
| 1000+: | $1.25536 |
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