Factory Lead Time  

6 Weeks

Package / Case  

8-PowerTDFN

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

8

Transistor Element Material  

SILICON

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

1.4V @ 250μA

Turn Off Delay Time  

32 ns

Power Dissipation (Max)  

3.1W Ta

Number of Elements  

1

Drive Voltage (Max Rds On, Min Rds On)  

3V 8V

Current - Continuous Drain (Id) @ 25℃  

33A Ta 100A Tc

Series  

NexFET™

Packaging  

Cut Tape (CT)

Operating Temperature  

-55°C~150°C TJ

JESD-609 Code  

e3

Pbfree Code  

yes

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

5

Termination  

SMD/SMT

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn)

Additional Feature  

AVALANCHE RATED

Terminal Position  

DUAL

Peak Reflow Temperature (Cel)  

260

Base Part Number  

CSD16325

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

3.1W

Case Connection  

DRAIN

Turn On Delay Time  

10.5 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

2m Ω @ 30A, 8V

Input Capacitance (Ciss) (Max) @ Vds  

4000pF @ 12.5V

Gate Charge (Qg) (Max) @ Vgs  

25nC @ 4.5V

Rise Time  

16ns

Vgs (Max)  

+10V, -8V

Fall Time (Typ)  

12 ns

Continuous Drain Current (ID)  

100A

Threshold Voltage  

1.1V

Gate to Source Voltage (Vgs)  

10V

Drain Current-Max (Abs) (ID)  

33A

Drain-source On Resistance-Max  

0.0027Ohm

Dual Supply Voltage  

25V

Avalanche Energy Rating (Eas)  

500 mJ

Nominal Vgs  

1.1 V

Width  

6mm

Length  

5mm

Height  

1.05mm

Thickness  

1mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No

REACH SVHC  

No SVHC

Lead Free  

Contains Lead